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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21130S Designed for W-CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 28 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 26% IM3 -- -37 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF5S21130 CASE 465C-02, STYLE 1 NI-880S MRF5S21130S MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 -0.5, +15 315 2 -65 to +150 200 92 Unit Vdc Vdc Watts W/C C C Watts NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 92 W CW Case Temperature 80C, 28 W CW Symbol RJC 0.56 0.56 Max Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.6 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.7 3.7 0.26 7.5 3.5 -- 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 12 13.5 -- dB 24 26 -- % IM3 -37 -35 dBc ACPR -- -39 -37 dBc IRL -- -12 -9 dB MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 MOTOROLA RF DEVICE DATA Vbias R1 + C1 R2 C3 C5 Z9 Z7 Z2 C7 C8 Z3 Z4 Z5 Z6 C6 Z10 C17 DUT Z8 Z11 Z12 Z13 C11 C9 + C13 + C15 + C20 Vsupply RF INPUT Z1 C18 Z14 Z15 Z16 RF OUTPUT C19 C10 + C2 C4 C12 + C14 + C16 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 0.500 x 0.083 Microstrip 0.995 x 0.083 Microstrip 0.905 x 0.083 Microstrip 0.159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709 x 0.083 Microstrip 0.415 x 1.000 Microstrip 0.531 x 0.083 Microstrip 0.994 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.76 mm, r = 2.55 Figure 1. MRF5S21130 Test Circuit Schematic Table 1. MRF5S21130 Test Circuit Component Designations and Values Part C1, C2, C13, C14, C15, C16 C3, C4, C11, C12 C5, C6, C7, C9, C10, C18, C19 C8 C17 C20 R1, R2 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 F, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 Manufacturer Vishay-Sprague Vishay-Vitramon ATC ATC ATC Philips MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 3 C1 R1 R2 C3 C9 C11 C13 C15 C20 C5 CUT OUT AREA C18 C7 C8 C6 C17 C19 C2 C4 C10 C12 C14 C16 MRF5S21130 Rev 0 Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 IM3 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) Gps 35 30 25 20 -28 -32 -36 -40 2100 2120 2140 2160 2180 2200 -44 2220 , DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 6 2060 2080 f, FREQUENCY (MHz) Figure 3. 2-Carrier W-CDMA Broadband Performance 15 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB) 14 IDQ = 1600 mA 1400 mA 1200 mA 1000 mA 800 mA -25 -30 -35 -40 -45 -50 -55 -60 -65 1 10 800 mA 1000 mA IDQ = 1600 mA 1400 mA 1200 mA 13.5 13 12.5 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 100 1000 11.5 11 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two-Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 0.1 5th Order 7th Order 3rd Order Pout , OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 100 50 35 37 39 P3dB = 53.02 dBm (200.5 W) Ideal P1dB = 52.5 dBm (178 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 2140 MHz 41 43 45 Pin, INPUT POWER (dBm) VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 10 TWO-TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 30 25 20 15 10 5 0 5 IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) ACPR -20 -25 -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 3.84 MHz Channel BW IM3 -30 -35 Gps -40 -45 -50 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 10 15 20 25 30 35 40 -55 45 Pout, OUTPUT POWER (WATTS) AVG. (W-CDMA) f, FREQUENCY (MHz) Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. 2-Carrier W-CDMA Spectrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 MTBF FACTOR (HOURS x AMPS 2 ) 10 109 108 107 106 0 2 4 6 8 105 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. MTBF Factor versus Junction Temperature MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 6 MOTOROLA RF DEVICE DATA f = 2200 MHz f = 2080 MHz Zload* Zo = 25 f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 2.87 - j9.49 3.13 - j9.86 4.05 - j10.90 4.80 - j11.75 5.55 - j11.87 Zload 1.51 - j2.97 1.52 - j2.54 1.59 - j2.68 1.62 - j2.70 1.54 - j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 7 NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 9 NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF Q bbb M TA M B M B (FLANGE) 3 K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa C M M F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B-03 ISSUE B NI-880 MRF5S21130 B 1 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M C F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T SEATING PLANE CASE 465C-02 ISSUE A NI-880S MRF5S21130S MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 12 MOTOROLA RF DEVICE DATA MRF5S21130/D |
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